Infineon IFS100B12N3E4_B31 IGBT Silicon Modules MIPAQ BASE 1200V 100A
ManufacturerInfineon(View more products from this manufacturer)
ModelIFS100B12N3E4_B31
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Technology: Si
Unit Weight: 300 g
Configuration: 6-Pack
Pd - Power Dissipation: 515 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
Continuous Collector Current at 25 C: 100 A
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