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Infineon IDDD04G65C6XTMA1 Schottky Silicon Carbide Diodes

ModelIDDD04G65C6XTMA1
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Technology: SiC

Unit Weight: 760 mg

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 13 A

Ir - Reverse Current: 400 nA

Vf - Forward Voltage: 1.25 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 56 W

Ifsm - Forward Surge Current: 29 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V

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