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Infineon GS-065-018-2-L-TR GaN FETs 650V, 18A, GaN E-mode, 8x8 PDFN, Bottom-side cooled

ModelGS-065-018-2-L-TR
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Technology: GaN

Transistor Type: E-Mode

Moisture Sensitive: Yes

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Maximum Operating Frequency: > 1 MHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 18 A

Vds - Drain-Source Breakdown Voltage: 650 V

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