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Infineon FS75R12W2T7BPSA1 IGBT Silicon Modules 1200 V, 75 A sixpack IGBT module

ModelFS75R12W2T7BPSA1
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Technology: Si

Configuration: 6-Pack

Mounting Style: Screw Mount

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 65 A

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