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Infineon FP10R12W1T7PB3BPSA1 IGBT Silicon Modules EASY STANDARD

ModelFP10R12W1T7PB3BPSA1
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Technology: Si

Configuration: Quad

Mounting Style: Screw Mount

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 10 A

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