Infineon FP100R12KT4_B11 IGBT Silicon Modules N-CH 1.2KV 100A
ManufacturerInfineon(View more products from this manufacturer)
ModelFP100R12KT4_B11
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Width: 62 mm
Height: 17 mm
Length: 122 mm
Technology: Si
Unit Weight: 300 g
Configuration: 3-Phase Inverter
Mounting Style: Screw Mount
Pd - Power Dissipation: 515 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
Continuous Collector Current at 25 C: 100 A
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