Infineon FF650R17IE4 IGBT Silicon Modules N-CH 1.7KV 930A
ManufacturerInfineon(View more products from this manufacturer)
ModelFF650R17IE4
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Width: 89 mm
Height: 38 mm
Length: 172 mm
Technology: Si
Unit Weight: 849 g
REACH - SVHC: Details
Configuration: Dual
Mounting Style: Screw Mount
Pd - Power Dissipation: 4.15 kW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 930 A
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