Infineon FF600R12KE7PHPSA1 IGBT Silicon Modules 1700 V, 600 A dual IGBT module
ManufacturerInfineon(View more products from this manufacturer)
ModelFF600R12KE7PHPSA1
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Technology: Si
Configuration: Dual
Mounting Style: Screw Mount
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
Continuous Collector Current at 25 C: 600 A
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