Infineon FF1200XTR17T2P5PBPSA1 IGBT Modules 1700 V, 1200 A dual IGBT module
ManufacturerInfineon(View more products from this manufacturer)
ModelFF1200XTR17T2P5PBPSA1
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Technology: Si
Configuration: Dual
Mounting Style: Screw Mount
Pd - Power Dissipation: 1.2 MW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 1.07 kA
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