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Infineon DD1000S33HE3 IGBT Silicon Modules IHM-B Module 3300V 1000A

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Technology: Si

Unit Weight: 800 g

Configuration: Dual

Pd - Power Dissipation: 1.6 MW

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 3.3 kV

Continuous Collector Current at 25 C: 1 kA

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