Infineon BFS481H6327XTSA1 Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 175 mW, 20 mA, SOT-363

Name: Infineon BFS481H6327XTSA1 Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 175 mW, 20 mA, SOT-363
Brand: Infineon

ModelBFS481H6327XTSA1

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No. of Pins: 6

Qualification: AEC-Q101

Power Dissipation: 175

Transistor Mounting: Surface Mount

Transistor Polarity: NPN

Transition Frequency: 8

Transistor Case Style: SOT-363

DC Current Gain hFE Min: 70

Operating Temperature Max: 150 °C

Collector Emitter Voltage Max: 12

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