Infineon BFR193E6327HTSA1 Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 580 mW, 80 mA, SOT-23

Name: Infineon BFR193E6327HTSA1 Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 580 mW, 80 mA, SOT-23
Brand: Infineon

ModelBFR193E6327HTSA1

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No. of Pins: 3

Transistor Mounting: Surface Mount

Transistor Polarity: NPN

Transition Frequency: 8000

Transistor Case Style: SOT-23

DC Current Gain hFE Min: 70@30mA@8V

Operating Temperature Max: 150 °C

Collector Emitter Voltage Max: 12

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