Infineon BFP196WNH6327XTSA1 RF Bipolar Transistors RF BIP TRANSISTORS
ManufacturerInfineon(View more products from this manufacturer)
ModelBFP196WNH6327XTSA1
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Technology: Si
Unit Weight: 6.740 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: Bipolar Wideband
Operating Frequency: 7.5 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 700 mW
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 150 mA
Maximum DC Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 70
Collector- Emitter Voltage VCEO Max: 12 V
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