Infineon BFP 740FESD H6327 RF Silicon Germanium RF BI
ManufacturerInfineon(View more products from this manufacturer)
ModelBFP 740FESD H6327
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Technology: SiGe
Unit Weight: 1.800 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 47 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 160 mW
Continuous Collector Current: 45 mA
DC Collector/Base Gain hfe Min: 160
Collector- Emitter Voltage VCEO Max: 4.2 V
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