Infineon BFP 740F H6327 RF Silicon Germanium RF BIP TRANSISTOR
ManufacturerInfineon(View more products from this manufacturer)
ModelBFP 740F H6327
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Width: 0.8 mm
Height: 0.55 mm
Length: 1.4 mm
Technology: SiGe
Unit Weight: 1.870 mg
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 42 GHz
Pd - Power Dissipation: 160 mW
DC Current Gain hFE Max: 400
Emitter- Base Voltage VEBO: 1.2 V
Collector- Base Voltage VCBO: 13 V
Continuous Collector Current: 30 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 4 V
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