Infineon BFP 720FESD H6327 RF Silicon Germanium RF BIP TRANSISTORS
ManufacturerInfineon(View more products from this manufacturer)
ModelBFP 720FESD H6327
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Technology: SiGe
Unit Weight: 1.870 mg
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 43 GHz
Pd - Power Dissipation: 100 mW
DC Current Gain hFE Max: 400
Collector- Base Voltage VCBO: 4.9 V
Continuous Collector Current: 30 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 4.2 V
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