Infineon BFP 650 H6327 RF Silicon Germanium RF BIP TRANSISTOR
ManufacturerInfineon(View more products from this manufacturer)
ModelBFP 650 H6327
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Technology: SiGe
Unit Weight: 31 mg
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 37 GHz
Pd - Power Dissipation: 500 mW (1/2 W)
Emitter- Base Voltage VEBO: 1.2 V
Continuous Collector Current: 150 mA
Collector- Emitter Voltage VCEO Max: 4 V
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