Infineon BDP947H6327XTSA1 BJTs - Bipolar Transistors AF TRANSISTORS
ManufacturerInfineon(View more products from this manufacturer)
ModelBDP947H6327XTSA1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 112 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 5 W
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 45 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 500 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts