Infineon BCR196WH6327XTSA1 Pre-Biased Bipolar Transistor
ManufacturerInfineon(View more products from this manufacturer)
ModelBCR196WH6327XTSA1
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Rated power: 250mW
Mounting Type: Surface Mount
Power-Maximum: 250mW
Transistor type: PNP-Prebias
Collector current: 70mA
DC electricity gain: 50@5mA|5V
Frequency-Transition: 150MHz
Resistance-Base (R1): 47kOhm
Vce Saturation (maximum): 300mV@500uA|10mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 22kOhm
DC current gain (hFE) (minimum): 50@5mA,5V
Current-Collector (Ic) (maximum): 70mA
Current-Collector cutoff (maximum): 100nA(ICBO)
Voltage-Collector-emitter breakdown (maximum): 50V
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