Infineon BCR148E6433HTMA1 Bipolar Transistor (BJT)
ManufacturerInfineon(View more products from this manufacturer)
ModelBCR148E6433HTMA1
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Rated power: 200mW
Mounting Type: Surface Mount
Power-Maximum: 200mW
Transistor type: NPN-Prebias
Collector current: 100mA
DC electricity gain: 70@5mA|5V
Frequency-Transition: 100MHz
Resistance-Base (R1): 47kOhm
Vce Saturation (maximum): 300mV@500uA|10mA
Collector-emitter voltage: 50V
Resistance-Emitter base (R2): 47kOhm
DC current gain (hFE) (minimum): 70@5mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 100nA(ICBO)
Voltage-Collector-emitter breakdown (maximum): 50V
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