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Infineon BAT1504WH6327XTSA1 Schottky Diodes RF DIODE

ModelBAT1504WH6327XTSA1
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Technology: Si

Unit Weight: 5 mg

Configuration: Dual Series

Qualification: AEC-Q100

Mounting Style: SMD/SMT

If - Forward Current: 110 mA

Ir - Reverse Current: 5 uA

Vf - Forward Voltage: 320 mV

Vr - Reverse Voltage: 4 V

Pd - Power Dissipation: 100 mW

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 4 V

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