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Infineon BAS7007E6327HTSA1 Schottky Diodes Silicon Schottky Diode

ModelBAS7007E6327HTSA1
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Technology: Si

Unit Weight: 11.070 mg

Configuration: Dual Parallel

Qualification: AEC-Q100

Mounting Style: SMD/SMT

If - Forward Current: 70 mA

Ir - Reverse Current: 100 nA

Vf - Forward Voltage: 880 mV

Vr - Reverse Voltage: 70 V

Pd - Power Dissipation: 250 mW

Ifsm - Forward Surge Current: 100 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 70 V

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