Infineon BAR 81W H6327 Switching Diode RF DIODE
ManufacturerInfineon(View more products from this manufacturer)
ModelBAR 81W H6327
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Technology: Si
Unit Weight: 6.400 mg
Carrier Life: 80 ns
Mounting Style: SMD/SMT
If - Forward Current: 100 mA
Ir - Reverse Current: 20 nA
Vf - Forward Voltage: 1 V
Vr - Reverse Voltage: 30 V
Pd - Power Dissipation: 100 mW
Maximum Diode Capacitance: 1 pF
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Maximum Series Resistance @ Maximum IF: 1 Ohms
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