Infineon IPL65R1K5C6SATMA1 MOSFETs N-Ch 650V 3A ThinPAK 5x6

Width: 5 mm

Height: 1.1 mm

Length: 6 mm

Fall Time: 18.2 ns

Rise Time: 5.9 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 26.6 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 7.7 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 1.5 Ohms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3 V