Infineon IPA65R150CFDXKSA2 MOSFETs HIGH POWER_LEGACY

Fall Time: 5.6 ns

Rise Time: 7.6 ns

Technology: Si

Mounting Style: Through Hole

Qg - Gate Charge: 8 nC

Number of Channels: 1 Channel

Pd - Power Dissipation: 34.7 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12.4 ns

Typical Turn-Off Delay Time: 52.8 ns

Id - Continuous Drain Current: 22.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 351 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V