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Infineon FP75R12KT4 IGBT Modules 1.85V IGBT 4 PIM

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Technology: Si

Unit Weight: 300 g

Configuration: 3-Phase Inverter

Mounting Style: Screw Mount

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 150 A

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