Infineon FP25R12W2T4PBPSA1 IGBT Silicon Modules 1200 V, 25 A PIM IGBT module
ManufacturerInfineon(View more products from this manufacturer)
ModelFP25R12W2T4PBPSA1
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Technology: Si
Unit Weight: 39 g
Configuration: 3-Phase Inverter
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Continuous Collector Current at 25 C: 25 A
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