Infineon BSD840N H6327 MOSFETs N-Ch 20V 880mA SOT-363-6

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Fall Time: 0.9 ns, 0.9 ns

Rise Time: 2.2 ns, 2.2 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 260 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 1.9 ns, 1.9 ns

Typical Turn-Off Delay Time: 7.8 ns, 7.8 ns

Id - Continuous Drain Current: 880 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.5 S, 2.5 S

Rds On - Drain-Source Resistance: 270 mOhms, 373 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 550 mV