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Infineon BFR 340F H6327 RF Bipolar Small Signal RF BIP TRANSISTOR

ModelBFR 340F H6327
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Technology: Si

Unit Weight: 1.430 mg

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 1.9 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 75 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 20 mA

Maximum DC Collector Current: 20 mA

DC Collector/Base Gain hfe Min: 90

Collector- Emitter Voltage VCEO Max: 6 V

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