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Infineon BFQ19SH6327XTSA1 RF Bipolar Transistors RF BIP TRANSISTORS

ModelBFQ19SH6327XTSA1
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Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 1.5 GHz

Transistor Polarity: NPN

Emitter- Base Voltage VEBO: 3 V

Continuous Collector Current: 70 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 15 V

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