For full functionality of this site it is necessary to enable JavaScript.
EMIN.MY
0
Product image

Infineon BFP 720 H6327 RF Silicon Germanium RF BIP TRANSISTOR

Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Technology: SiGe

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 45 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

Emitter- Base Voltage VEBO: 1.2 V

Continuous Collector Current: 25 mA

DC Collector/Base Gain hfe Min: 160

Collector- Emitter Voltage VCEO Max: 4 V

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts