Infineon BFP 520 H6327 RF Bipolar Small Signal RF BIP TRANSISTOR
ManufacturerInfineon(View more products from this manufacturer)
ModelBFP 520 H6327
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 7 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 45 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 125 mW
Emitter- Base Voltage VEBO: 1 V
Continuous Collector Current: 50 mA
DC Collector/Base Gain hfe Min: 70
Collector- Emitter Voltage VCEO Max: 2.5 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts