Infineon BCX 52-16 E6327 BJTs - Bipolar Transistors PNP Silicon AF TRANSISTOR

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV