Infineon BCV62CE6327HTSA1 BJTs - Bipolar Transistors PNP 30 V 100 mA

Technology: Si

Unit Weight: 110 mg

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 800

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 420

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 250 mV