GeneSiC G2R120MT33J SiC MOSFET 3300V 120mohm TO-263-7 G2R SiC MOSFET

Fall Time: 16 ns

Rise Time: 26 ns

Technology: SiC

Unit Weight: 1.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 130 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 366 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 96 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.8 S

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 3.3 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V