Vishay General Semiconductor VS-GT80DA60U IGBT Modules MODULES IGBT - SOT-227 IGBT
ModelVS-GT80DA60U
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 454 W
Gate-Emitter Leakage Current: 250 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Continuous Collector Current at 25 C: 123 A
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