Fairchild KSP10BU BJTs - Bipolar Transistors NPN Si Transistor Epitaxial
ManufacturerFairchild(View more products from this manufacturer)
ModelKSP10BU
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Width: 3.93 mm
Height: 4.7 mm
Length: 4.7 mm
Technology: Si
Unit Weight: 179 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 350 mW
Gain Bandwidth Product fT: 650 MHz
Emitter- Base Voltage VEBO: 3 V
Collector- Base Voltage VCBO: 30 V
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 25 V
Collector-Emitter Saturation Voltage: 500 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts

