Fairchild KSD2012GTU BJTs - Bipolar Transistors NPN Si Transistor Epitaxial
ManufacturerFairchild(View more products from this manufacturer)
ModelKSD2012GTU
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Width: 4.7 mm
Height: 9.19 mm
Length: 10.16 mm
Technology: Si
Unit Weight: 2.270 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 25 W
DC Current Gain hFE Max: 320
Gain Bandwidth Product fT: 3 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 400 mV
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