Fairchild KSA916YTA BJTs - Bipolar Transistors PNP Epitaxial Transistor

Width: 3.9 mm

Height: 8 mm

Length: 4.9 mm

Technology: Si

Unit Weight: 371.100 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 900 mW

DC Current Gain hFE Max: 240

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: - 800 mA

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 1 V