Fairchild KSA1010YTU BJTs - Bipolar Transistors PNP Epitaxial Sil

Width: 4.7 mm

Height: 9.4 mm

Length: 10.1 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 7 A

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 600 mV