Fairchild FQA13N80-F109 MOSFETs TO-3P N-CH 600V

Width: 5 mm

Height: 20.1 mm

Length: 16.2 mm

Fall Time: 110 ns

Rise Time: 150 ns

Technology: Si

Unit Weight: 4.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 88 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 60 ns

Typical Turn-Off Delay Time: 155 ns

Id - Continuous Drain Current: 12.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 750 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V