Fairchild FJB5555TM BJTs - Bipolar Transistors NPN Silicon Transistor
ManufacturerFairchild(View more products from this manufacturer)
ModelFJB5555TM
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Technology: Si
Unit Weight: 1.312 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.6 W
Emitter- Base Voltage VEBO: 14 V
Collector- Base Voltage VCBO: 1.05 kV
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 1.5 V
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