Fairchild FJA4213RTU BJTs - Bipolar Transistors PNP Epitaxial Silicon Transistor

Width: 5 mm

Height: 18.9 mm

Length: 15.8 mm

Technology: Si

Unit Weight: 6.401 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 130 W

DC Current Gain hFE Max: 160

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 250 V

Continuous Collector Current: - 15 A

Maximum DC Collector Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

DC Collector/Base Gain hfe Min: 55

Collector- Emitter Voltage VCEO Max: 250 V

Collector-Emitter Saturation Voltage: 400 mV