Fairchild FDG1024NZ Power Trench MOSFET Dual PT4 N 20/8V

Width: 1.25 mm

Height: 1.1 mm

Length: 2 mm

Technology: Si

Unit Weight: 28 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 2.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 3.7 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 1.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4 S

Rds On - Drain-Source Resistance: 321 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV