Diotec Semiconductor DI2579N BJTs - Bipolar Transistors BJT, SOT-223, 700V, 1000mA, NPN
ModelDI2579N
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Unit Weight: 200 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1.25 W
DC Current Gain hFE Max: 20
Gain Bandwidth Product fT: 0 Hz
Emitter- Base Voltage VEBO: 9 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 700 V
Collector-Emitter Saturation Voltage: 1 V
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