Diotec Semiconductor BC556C BJTs - Bipolar Transistors BJT, TO-92, 65V, 100mA, PNP

Unit Weight: 39 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 250 mV