Diodes Incorporated ZXTP19100CGTA BJTs - Bipolar Transistors PNP 100V 2A

Width: 3.7 mm

Height: 1.65 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 112 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 5.3 W

DC Current Gain hFE Max: 500 at - 100 mA, -2 V

Gain Bandwidth Product fT: 142 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 110 V

Continuous Collector Current: - 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20 at - 2 A, - 2 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 220 mV