Diodes Incorporated ZXTP08400BFFTA BJTs - Bipolar Transistors PNP 400V Transistor

Width: 1.7 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 48.800 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 70 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: - 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 140 mV