Diodes Incorporated ZXTN25100DZTA BJTs - Bipolar Transistors NPN 100V HIGH GAIN

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.4 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 180 V

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 220 mV