Diodes Incorporated ZXTN25012EFHTA BJTs - Bipolar Transistors NPN 12V HIGH GAIN

Width: 1.4 mm

Height: 1 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 500 at 10 mA, 2 V

Gain Bandwidth Product fT: 260 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 6 A

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 500

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 160 mV